Simulation of Crystallization Process in Facilities for Growing Monocrystals
Authors: Kuvyrkin G.N., Lomokhova A.V. | Published: 06.03.2014 |
Published in issue: #4(27)/2007 | |
DOI: | |
Category: Applied Mathematics and Methods of Mathematical Simulation | |
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The influence of the crucible material on technological parameters of the crystallization process (shape of crystallization front, speed of crystal growth, temperature gradient in the system crystal-melt) is studied with reference to a method of the axial heat flux near the crystallization front ("OTF"-method) using mathematical simulation methods. The influence of gas convection on the temperature distribution in the "OTF"-facility is investigated as well. It is shown that a choice of the crucible material and also the convection in gas taken into account make a great impact on the temperature distribution in the crystallization region and hence on the crystal parameters.