X-Ray Diffraction Study of Structural Properties of the (Ge₂)_{1 - x - y}(ZnSe)_x(GaAs_{1 - δ}Bi_δ)_y Epitaxial Films Grown on the Silicon Substrates

Abstract

The article presents results of an X-ray diffraction study of the (Ge₂)_{1 - x - y}(ZnSe)_x(GaAs_{1 - δ}Bi_δ)_y, epitaxial films grown by the liquid phase epitaxy on silicon substrates with the crystallographic orientation (111). The grown epitaxial films appear to be the (Ge₂)_{1 - y}(ZnSe)_x(GaAs_{1 - δ}Bi_δ)_y solid solutions with the gradually altering molar composition (0 ≤ x ≤ 0.72 and 0 ≤ y ≤ 0.46), where mutual substitution of the components proceeds. A layer enriched by the ZnSe and GaAs_{1 - δ}Bi_δ, wide-bandgap compounds forms in the transition region between the film substrate and surface layers. The paper establishes that the (Ge₂)_{1 - y}(ZnSe)_x(GaAs_{1 - δ}Bi_δ)_y obtained epitaxial film is a monocrystal with crystallographic orientation (111), and consists of the diamond-like structure unit cells with the lattice parameter a_exp = 0.5658 nm. The analysis results show that nanocrystallites of the GaAs_{1 - δ}Bi_δ compounds formed spontaneously in the epitaxial layer surface regions, have a cubic unit cell with the lattice parameter of 5.9978 nm, and belong to the P4₃m phase group. It is found that the nanocrystallites sizes (33.9; 34.5; 34.9 nm) and their average value (∼ 34 nm) indicate that the nanocrystallites have a rounded geometric shape and are formed pre-dominantly with the equal sizes

The work was supported by the Ministry of Innovative Development of the Republic of Uzbekistan (grant no. FZ-292154210)

Please cite this article in English as:

Zaynabidinov S.Z., Boboev A.Y., Yunusaliyev N.Yu., et al. X-ray diffraction study of structural properties of the (Ge₂)_{1 - x - y}(ZnSe)_x(GaAs_{1 - δ}Bi_δ)_y epitaxial films grown on the silicon substrates. Herald of the Bauman Moscow State Technical University, Series Natural Sciences, 2025, no. 6 (123), pp. 60--75 (in Russ.). EDN: XUGAZS

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