Structural and Photoelectric Properties of Heterostructure n-GaAs--p-(ZnSe)_1-x-y(Ge₂)_x(GaAs_1-δBi_δ)_y with Various Nanoparticles

Abstract

This article presents experimental results of the study of structural and photoelectric properties of heterostructuren-GaAs--p-(ZnSe)_1-x-y(Ge₂)_x(GaAs_1-δBi_δ)_y with different nanoparticles obtained by liquid-phase epitaxy. On the basis of X-ray microprobe and structural analysis, the distribution profile of ZnSe, GeGaAs_1-δBi_δ components in the epitaxial layer with a gradual change of composition along the depth has been determined. The formation of Ge₂ nanocrystals andGaAs_1-δBi_δ, which determine the unique photoelectric properties of the investigated heterostructure, has been established. The mechanisms of charge transfer depending on the direction of current flow have been determined, and the criterion of predominance of the drift mechanism of charge transfer over the diffusion one has been revealed. Photosensitivity of the studied heterostructure is characterized by three main peaks at photon energies of 1.61; 1.97, and 2.63 eV. A more detailed analysis of the spectra showed that the middle peak with maximum intensity has a complex structure, which allowed us to identify an additional, fourth peak in the energy range of 2.1--2.3 eV. These peaks correspond to the energy spectra of germanium nanocrystals formed at the boundaries of the film subcrystallites, and GaAs_1-δBi_δ formed in the near-surface region of the epitaxial layer

The work was supported by the Ministry of Innovative Development of the Republic of Uzbekistan (grant no. FZ-2921542100)

Please cite this article in English as:

Zaynabidinov S.Z., Boboev A.Y., Soliev I.M., et al. Structural and photoelectric properties of heterostructure with various nanoparticles. Herald of the Bauman Moscow State Technical University, Series Natural Sciences, 2026, no. 2 (125), pp. 41--61 (in Russ.). EDN: TGCWMA

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