Effect of Injection Phenomena on Electrical Properties of pSi--nSi_1--xSn_x Heterojunctions

We studied the current-voltage characteristic of pSi--nSi_1--xSn_x structures in the temperature range of 293--393 K so as to find out the role of injection phenomena during electrical property formation in pSi--nSi_1--xSn_х heterojunctions derived from the Si_1--xSn_x (0 ≤ x ≤ 0.04) solid solution. We established that the current-voltage characteristic of such heterojunctions consists of two typical segments. We determined that an exponential function describes the first current-voltage characteristic segment well. In all current-voltage characteristics the exponential curve is followed by sublinear segments that do not depend on temperature. We show that the theory of injection depletion effect describes these segments well. We used the sublinear segment of the current-voltage characteristic to determine the value of the parameter a, which can be employed to calculate deep level impurity concentration leading to the appearance of the sublinear segment. We prove that the structure under investigation may be considered to be a pSi--nSi_1--xSn_x--n⁺Si_1--xSn_x (0 ≤ x ≤ 0.04) junction with a high-resistance nSi_1--xSn_x layer. The analysis results make it possible to conclude that charge carrier dissipation on both complex aggregates and nanoinclusions plays a significant role in forming electrophysical properties in the Si_1--xSn_x (0 ≤ x ≤ 0.04) solid solution and that epitaxial films of Si_1--xSn_x (0 ≤ x ≤ 0.04) solid solutions derived on silicon substrates are efficient promising materials for developing diodes operating under double injection

The study was conducted as part of the project of the State Science and Engineering Program of the Republic of Uzbekistan (project no. OT-F2-68)

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