Laser-Induced Secondary Radiation in Condensed Dielectric Media

When the secondary radiation in wide-gap semiconductors under conditions of the liquid helium boiling temperature is induced by a continuous-wave He-Ne laser, the generation line of which falls within the transparency range of the examined materials, the anti-Stokes photoluminescence of samples is observed. With Ar laser and Cu laser inducing the secondary radiation, the sample photoluminescence is revealed not only in wide-gap semiconductors but also in a number of condensed dielectrics under both low and room temperature of the sample.