Single-Crystal Aluminum Film Formation Using the SCULL Technology

Abstract

The article presents results of a comprehensive study of the island stage in thin aluminum film growth required to form a seed layer and the built on it continuous single-crystal thin film using the SCULL technology. Influence of the electron beam evaporation process parameters, i.e., substrate temperature during thin film growth at 200--500 °С and seed layer thickness of 3--5 nm, on the islands’ lateral size was studied. Experimental samples were examined using scanning electron microscopy, electron backscatter diffraction, X-ray diffraction, and atomic force microscopy. The study resulted in obtaining the dependence of alteration in the growth pattern of the aluminum thin film seed layer on the deposition process parameters. The developed technology of forming a seed layer on the Si(111) silicon substrate matched with aluminum by a constant lattice made it possible to obtain a continuous aluminum film with the single-crystal structure on its basis, its thickness was 35 nm. The mean-square roughness of the film was less than 0.4 nm, FWHM = 0.453°

Experimental samples and technology were developed at the Bauman Moscow State Technical University Technology Center (Scientific-Educational Center
of Functional Micro/Nanosystems, ID 74300). The work was carried out using the Dimension Icon atomic force microscope, which is a part of the Avogadro unique scientific installation (http://avo.ibmc.msk.ru/)

Please cite this article in English as:

Androshchuk M.V., Moskalev D.O., Korshakov N.D., et al. Single-crystal aluminum film formation using the SCULL technology. Herald of the Bauman Moscow State Technical University, Series Natural Sciences, 2024, no. 5 (116), pp. 56--70 (in Russ.). EDN: MBZAUW