Influence of Recombination Processes on the Temperature Dependence of the Current-Voltage Characteristics of pSi--n(Si₂)_{1 -- x}(CdS)_x-Structures

Abstract

KeywordsAs a result of the analysis of the volt-ampere characteristics of p--n structures based on solid solutions of silicon with cadmium sulfide in the temperature range of 293--463 K, the importance of the influence of recombination processes is determined in the article. It is shown that the volt-ampere characteristics of these structures consist of several specific sites. The first section is satisfactorily described by linear dependence, the second and third sections by exponential dependence. The appearance of the exponential section is the result of the implementation of the long diode mode, which was first determined by V.I. Stafeev. The parameters calculated in this mode made it possible to determine the significant role of the resistivity of the n(Si₂)_{1 -- x}(CdS)_x transition layer in the formation of the electrophysical properties of the studied structures. The results of the analysis of the third section of the volt-ampere characteristics led to the conclusion that the diffusion mechanism plays a significant role in the formation of the electrophysical properties of solid solutions (Si₂)_{1 -- x}(CdS)_x (0 ≤ x ≤ 0.01). However, as the temperature increases, this mechanism gradually turns into a drift one. Thus, the results obtained confirm the importance of the resistivity of the transition layer and the diffusion mechanism in the formation of the electrical properties of such structures. It is recommended to use (Si₂)_{1 -- x}(CdS)_x solid solutions as active detector elements, especially in injection mode and in the creation of temperature-dependent optical systems for recording background signals and spectra of metals and their alloys

Please cite this article in English as:

Madaminov Kh.M. Influence of recombination processes on the temperature dependence of the current-voltage characteristics of pSi--n(Si₂)_{1 -- x}(CdS)_x-structures. Herald of the Bauman Moscow State Technical University, Series Natural Sciences, 2025, no. 2 (119), pp. 35--51 (in Russ.). EDN: JBOXKK

References

[1] Slyotov M.M., Makhniy V.P., Slytov A.М., et al. Peculiarities of the optical properties of wide-gap II-VI compounds with Mg isovalent impurity. Telecommun. Radio Eng., 2014, vol. 73, iss. 10, pp. 909--914. DOI: https://doi.org/10.1615/telecomradeng.v73.i10.50

[2] Usmonov Sh.N. Influence of GaAs molecules on the photosensitivity of p-Si--n-(GaSb)_{1 -- x}(Si₂)_x and n-GaAs--p-(InSb)_{1 -- x}(Sn₂)_x heterostructures. Appl. Sol. Energy, 2016, vol. 52, no. 3, pp. 211--214. DOI: https://doi.org/10.3103/S0003701X16030178

[3] Saidov A.S., Usmonov Sh.N., Amonov K.A., et al. Photosensitivity of pSi--n(Si₂)_{1 -- x -- y}(Ge₂)_x(ZnSe)_y heterostructures with quantum dots. Appl. Sol. Energy, 2017, vol. 53, no. 4, pp. 287--290. DOI: https://doi.org/10.3103/S0003701X17040132

[4] Li Q., Li X., Yu J. Surface and interface modification strategies of CdS-based photocatalysts. In: Interface Science and Technology, vol. 31. Elsevier, 2020, pp. 313--348. DOI: https://doi.org/10.1016/b978-0-08-102890-2.00010-5

[5] Cheng L., Xiang Q.J., Liao Y.L., et al. CdS-based photocatalysts. Energy Environ. Sci., 2018, vol. 11, no. 6, pp. 1362--1391. DOI: https://doi.org/10.1039/C7EE03640J

[6] Yuan Y.J., Chen D.Q., Yu Z.T., et al. Cadmium sulfide-based nanomaterials for photocatalytic hydrogen production. J. Mater. Chem. A, 2018, vol. 6, no. 25, pp. 11606--11630. DOI: https://doi.org/10.1039/C8TA00671G

[7] Lang D., Xiang Q., Qiu G., et al. Effects of crystalline phase and morphology on the visible light photocatalytic H₂-production activity of CdS nanocrystals. Dalton Trans., 2014, vol. 43, no. 19, pp. 7245--7253. DOI: https://doi.org/10.1039/C3DT53601G

[8] Muruganandam S., Anbalagan G., Murugadoss G. Synthesis and structural, optical and thermal properties of CdS:Zn²⁺ nanoparticles. Appl. Nanosci., 2014, vol. 4, no. 8, pp. 1013--1019. DOI: https://doi.org/10.1007/s13204-013-0284-z

[9] Low J.X., Yu J.G., Jaroniec M., et al. Heterojunction photocatalysts. Adv. Mater., 2017, vol. 29, no. 20, art. 1601694. DOI: https://doi.org/10.1002/adma.201601694

[10] Li Q., Li X., Wageh S., et al. CdS/graphene nanocomposite photocatalysts. Adv. Energy Mater., 2015, vol. 5, no. 4, art. 1500010. DOI: https://doi.org/10.1002/aenm.201500010

[11] Yuan Y.P., Ruan L.W., Barber J., et al. Hetero-nanostructured suspended photocatalysts for solar-to-fuel conversion. Energy Environ. Sci., 2014, vol. 7, no. 12, pp. 3934--3951. DOI: https://doi.org/10.1039/C4EE02914C

[12] Zhang J., Qiao S.Z., Qi L., et al. Fabrication of NiS modified CdS nanorod p--n junction photocatalysts with enhanced visible-light photocatalytic H₂-production activity. Phys. Chem. Chem. Phys., 2013, vol. 15, no. 29, pp. 12088--12094. DOI: https://doi.org/10.1039/C3CP50734C

[13] Saidov A.S., Leyderman A.Y., Usmonov S.N., et al. Effect of injection depletion in p-Si--n-(Si₂)_{1 -- x}(ZnSe)_x (0 ≤ x ≤ 0.01) heterostructure. Semiconductors, 2018, vol. 52, no. 9, pp. 1188--1192. DOI: https://doi.org/10.1134/S1063782618090142

[14] Mekky A.H. Simulation and modeling of the influence of temperature on CdS/CdTe thin film solar cell. Eur. Phys. J. Appl. Phys., 2019, vol. 87, no. 3, art. 30101. DOI: https://doi.org/10.1051/epjap/2019190037

[15] Sabory-Garcia R.A., Leal-Cruz A.L., Vera-Marquina A., et al. Modeling and analytical study for efficiency improvement for thin film solar cells based on CdS/PbS, CdS/CdTe, and CdS/CdSe. Chalcogenide Lett., 2018, vol. 15, no. 12, pp. 625--638.

[16] Зайнабидинов C.З., Мадаминов Х.М. Механизм токопрохождения в полупроводниковых p-Si--n-(Si₂)_{1 -- x}(CdS)_x структурах. Вестник МГТУ им. Н.Э. Баумана. Сер. Естественные науки, 2020, № 4 (91), с. 58--72. DOI: http://dx.doi.org/10.18698/1812-3368-2020-4-58-72

[17] Sapaev I.B., Sapaev B., Babajanov D.B. Current-voltage characteristic of the injection photodetector based on M(In)--nCdS--pSi--M(In) structure. SPQEO, 2019, vol. 22, no. 2, pp. 188--192. DOI: http://doi.org/10.15407/spqeo22.02.188

[18] Saidov A.S., Razzakov A.Sh., Risaeva V.A., et al. Liquid-phase epitaxy of solid solution (Ge₂)_{1 -- x}(ZnSe)_x. Mater. Chem. Phys., 2001, vol. 68, iss. 1-3, pp. 1--6. DOI: https://doi.org/10.1016/S0254-0584(00)00230-3

[19] Dirko V.V., Lozovoy K.A., Kokhanenko A.P., et al. Thickness-dependent elastic strain in Stranski --- Krastanow growth. Phys. Chem. Chem. Phys., 2020, vol. 22, no. 34, pp. 19318--19325. DOI: https://doi.org/10.1039/D0CP03538F

[20] Wu J., Chen S., Seeds A., et al. Quantum dot optoelectronic devices: lasers, photodetectors and solar cells. J. Phys. D: Appl. Phys., 2015, vol. 48, no. 36, art. 363001. DOI: https://doi.org/10.1088/0022-3727/48/36/363001

[21] Madaminov Kh.M. Temperature dependences of the electrophysical properties of the solid solution Si_{1 -- x}Sn_x (0 ≤ x ≤ 0.04). Prikladnaya fizika, 2021, no. 1, pp. 63--68 (in Russ.). DOI: https://doi.org/10.51368/1996-0948/2021-1-63-68

[22] Mirsagatov Sh.A., Leyderman A.Yu., Ataboev O.K. Mechanism of charge transfer in injection photodiodes based on the In--n⁺-CdS--n-CdS_xTe_{1 -- x}--p-Zn_xCd_{1 -- x} Te--Mo structure. Phys. Solid State, 2013, vol. 55, no. 8, pp. 1635--1646. DOI: https://doi.org/10.1134/S1063783413080192

[23] Leyderman A.Yu., Minbaeva M.K. Mechanism of rapid growth of direct current in semiconductor diode structures. Fizika i tekhnika poluprovodnikov, 1996, vol. 30, no. 10, pp. 1729--1738 (in Russ.).

[24] Madaminov Kh.M. Effect of injection phenomena on electrical properties of pSi-nSi_{1 -- x}Sn_x heterojunctions. Herald of the Bauman Moscow State Technical University, Series Natural Sciences, 2021, no. 2 (95), pp. 71--84 (in Russ.). DOI: https://doi.org/10.18698/1812-3368-2021-2-71-84

[25] Saidov A.S., Amonov K.A., Leyderman A.Yu. Research of the dependence of current-voltage characteristics of p-Si--n-(Si₂)_{1 -- x -- y}(Ge₂)_x(ZnSe)_y-structures on temperature. Computational Nanotechnology, 2019, vol. 6, no. 3, pp. 16--21 (in Russ.). DOI: https://doi.org/10.33693/2313-223X-2019-6-3-16-21

[26] Leiderman A.Yu., Ayukhanov R.A., Turmanova R.M., et al. Non-recombination injection mode. SPQEO, 2021, vol. 24, no. 3, pp. 248--254. DOI: http://doi.org/10.15407/spqeo24.03.248